It is showed that after doping s the bn thin films of n - type conductivity are obtained 研究表明,未掺杂的氮化硼薄膜电阻率为为1
2 for the first time , rf sputtering method and vapor doping method have been combined to prepare n type bn films . bn films doped with s are n type conductivity 掺s后的氮化硼薄膜表现出n型导电,未掺杂的氮化硼薄膜的电阻率1 . 8 1011 cm ,掺杂后的氮化硼薄膜的电阻率为7 . 3 107 cm 。
Bn films doped with s are n type conductivity . undoped bn films exhibit a resistivity of 1 . 8 1011 cm and those of doped are 2 . 13 105 cm , decreased by six order of magnitude . s fountain temperature and substrate temperature impact the resistivity evidently S源加热温度对氮化硼薄膜的电阻率有直接影响,表现在随着s源加热温度的升高,氮化硼薄膜的电阻率下降的趋势加快。